The binding energy of donor impurities in GaAs quantum dots under the pressure effect

Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostatic pressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. The effect of the pressure is to exert an additional confinement on the impurity inside the dot; therefore the binding energy increases for any dot radius and impurity position. We also found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge.